maximum ratings and electrical characteristics rating at 25 ambient temperature unless otherwise specified. single phase, half wave, 60 hz, resistive or inductive load. for capacitive load, derate current by 20% v rrm 50 100 150 200 300 400 500 600 v v rms 35 70 105 140 210 280 350 420 v v dc 50 100 150 200 300 400 500 600 v trr ns cj pf r jc t j t stg note 3: measured at 1 mhz and applied reverse voltage of 4.0v d.c. 1.7 v maximum instantaneous forward voltage (note 1) @ 16 a v f 0.975 1.3 100 maximum reverse current @ rated vr t a =25 t a =100 i r 10 400 maximum reverse recovery time (note 2) 35 - 65 to + 150 typical junction capacitance (note 3) note 2: reverse recovery test conditions: i f =0.5a, i r =1.0a, i rr =0.25a note 1: pulse test with pw=300 usec, 1% duty cycle operating temperature range storage temperature range - 65 to + 150 1 130 maximum rms voltage maximum dc blocking voltage maximum average forward rectified current maximum repetitive peak reverse voltage typical thermal resistance ua i fsm i f(av) 200 a a type number symbol fes 16at fes 16bt fes 16ct fes 16dt 16 peak forward surge current, 8.3 ms single half sine- wave superimposed on rated load (jedec method) unit fes 16jt fes 16ft fes 16gt fes 16ht features low forward voltage drop glass passivated chip junction high current capability case: heatsink to-220ac high surge current capability weight: 2.1 gram approxiamtely polarity: as marked on diode body method 208 mounting position: any terminals: solderable per mil-std-202 mechanical data low reverse leakage current epoxy: ul 94v-0 rate flame retardant ? fes16at thru fes16jt pb free plating product fes16at thru fes16jt application automotive inverters/solar inverters plating power supply,smps and ups car audio amplifiers and sound device systems pb 16.0 ampere glass passivated super fast recovery rectifier diode to-220ac unit : inch (mm) positive negative suffix "tr" suffix "t" ? 2006 thinki semiconductor co.,ltd. http://www.thinkisemi.com/ page 1/2 rev.04/2014 .196(5.00) .054(1.39) .038(0.96) .419(10.66) .139(3.55) min .624(15.87) .269(6.85) .548(13.93) .50(12.7)min .177(4.5)max .226(5.75) .163(4.16) .045(1.15) .019(0.50) .025(0.65)max .1(2.54) .1(2.54) .387(9.85) /w
ratings and characteristic curves (fes16at thru fes16jt) fig.1 forward current derating curve 0 4 8 12 16 20 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 case temperature ( o c) average forward a current (a) fig. 3 maximum non-repetitive forward surge current 0 50 100 150 200 250 1 10 100 number of cycles at 60 hz peak forward surge a current (a) 8.3ms single half sine wave jedec method fig. 2 typical reverse characteristics 0.1 1 10 100 1000 0 20 40 60 80 100 120 140 percent of rated peak reverse voltage (%) instantaneous reverse current(ua) ta=25 ta=100 ta=75 fig. 4 typical junction capacitance 0 50 100 150 200 250 300 1 10 100 1000 reverse voltage (v) capacitance (pf) ta=25 fes16at-fes16dt fes16ft-fes16jt fig. 5 typical forward characterisrics 0.01 0.1 1 10 100 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 forward voltage (v) instantaneous forward current (a) ta=25 pulse width=300us 1% duty cycle fes16at-fes16dt fes16ft-fes16gt fes16ht-fes16jt ? 2006 thinki semiconductor co.,ltd. http://www.thinkisemi.com/ page 2/2 rev.04/2014 ? fes16at thru fes16jt
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